Browse Prior Art Database

High Capacity Laser Store

IP.com Disclosure Number: IPCOM000091766D
Original Publication Date: 1968-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Myers, RA: AUTHOR [+2]

Abstract

This scanlaser functions as a semirandom access, variable storage time, electronically written, electronically erased, optically read in parallel, nondestructive readout, high capacity store. There can be realized a storage of 10/7/or more bits which is particularly suited for associative memory and catalog-type applications.

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High Capacity Laser Store

This scanlaser functions as a semirandom access, variable storage time, electronically written, electronically erased, optically read in parallel, nondestructive readout, high capacity store. There can be realized a storage of 10/7/or more bits which is particularly suited for associative memory and catalog- type applications.

The electron-beam scanlaser is modified by the removal of the transparent conducting coating and the insertion as the target for the electron beam of a highly insulating dielectric, e.g., mica. See the IBM Technical Disclosure Bulletin, Vol. 10, page 610. This scanlaser stores the deposited charge for a very long time, for example, in the order of months. This long storage capability can be so used as to allow the amount of charge deposited on a given point to be determined and, therefore, to provide an additional degree of freedom for the memory.

The electron-beam scanlaser mode selector is shown in the drawing. The mode selector consists of crystal 10 exhibiting the longitudinal electro-optic effect, e.g., KDP or lithium niobate, dielectric reflector 12, a thin sheet of mica 14, and a thin film of a photoconductor 16 with a very high dark resistivity. Reflector 12 is broken up into islands approximately the size of a single focused transverse mode, about 25 microns, separated by about half this distance. Mica 14 can also be segmented to form islands overlapping those on the mirror, or some other insulator, e.g., SiO(2), can be used. Two other elements are lamp 18 to activate the photoconductor and an electronically variable bias 20, which need have no ...