Browse Prior Art Database

Conductor Stripe for Planar Transistors

IP.com Disclosure Number: IPCOM000091825D
Original Publication Date: 1968-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Herdzik, RJ: AUTHOR [+2]

Abstract

This metallurgy stripe structure minimizes stripe failure due to electromigration. Under certain conditions of temperature and current density, there is a mass transport of metal, due to the electromigration phenomenon, in the stripe structure of semiconductor devices. The problem is of particular concern in aluminum stripes in areas of high current densities, particularly in the emitter stripe.

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Conductor Stripe for Planar Transistors

This metallurgy stripe structure minimizes stripe failure due to electromigration. Under certain conditions of temperature and current density, there is a mass transport of metal, due to the electromigration phenomenon, in the stripe structure of semiconductor devices. The problem is of particular concern in aluminum stripes in areas of high current densities, particularly in the emitter stripe.

A prior stripe structure is shown at A, a top fragmentary view of a planar transistor. The probable point of failure is in the thin section of the emitter stripe adjacent the ohmic contact.

The current capacity of the emitter stripe can be greatly increased by having stripe 10 approach the ohmic contact from the side as in B. The step-down of the stripe into the aperture in the insulating film, which is normally the most constricted portion of the stripe, is greatly increased in length thus providing added current carrying capacity.

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