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Barrier Layer Metallurgy for Aluminum Stripes

IP.com Disclosure Number: IPCOM000091828D
Original Publication Date: 1968-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Herdzik, RJ: AUTHOR [+3]

Abstract

This structure prevents reaction between AlSi or Al films and primarily the lower glass layer during firing, and also protects the Al films when contact holes are etched in the glass.

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Barrier Layer Metallurgy for Aluminum Stripes

This structure prevents reaction between AlSi or Al films and primarily the lower glass layer during firing, and also protects the Al films when contact holes are etched in the glass.

During normal glass firing at temperatures on the order of 450 to 560 Degrees C there is a considerable reaction between Al and glass, particularly phosphosilicate glass. Another problem exists during etching of contact holes in a glass layer overlying Al films. The acid etch normally used can develop holes in the Al stripe that permits attack of the oxide underneath.

This metallurgy structure has layer 1 of Al or AlSi overlying SiO(2) layer 2 and upper and lower barrier layers 3 and 5 of Cr, Mo, or W. Layer 5 is not in direct contact with the silicon of the device. The metallurgy is covered by layer 4 of sputtered or lead borosilicate glass. Layers 3 and 5 prevent reaction between the Al and glass during firing, and also protect the Al during the etching of contact hole 6. Layer 3 also prevents alloying of Al and solder when a solder reflow device contact is used in hole 6.

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