Browse Prior Art Database

Schottky Diode

IP.com Disclosure Number: IPCOM000091856D
Original Publication Date: 1968-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Esaki, L: AUTHOR [+2]

Abstract

This Schottky diode structure counteracts the effects of high electric fields at the periphery of the metallic electrode to avoid high reverse currents and soft characteristics. Metallic Layer 1, e.g., of molybdenum, chromium, etc., is deposited over semiconductor wafer 3, e.g., of N-type silicon, to define Schottky barrier 5. Metallic layer 7, e.g., of nickel, gold, platinum, etc., is deposited over layer 1 so as to contact substrate 3 along the entire periphery of layer 1 and define Schottky barrier 9. The metal of layer 7 provides a higher barrier height with substrate 3 than the metal of layer 1, i. e., Schottky barrier 9 exhibits a larger reverse breakdown voltage and a larger forward threshold voltage than Schottky barrier 5.

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Schottky Diode

This Schottky diode structure counteracts the effects of high electric fields at the periphery of the metallic electrode to avoid high reverse currents and soft characteristics. Metallic Layer 1, e.g., of molybdenum, chromium, etc., is deposited over semiconductor wafer 3, e.g., of N-type silicon, to define Schottky barrier 5. Metallic layer 7, e.g., of nickel, gold, platinum, etc., is deposited over layer 1 so as to contact substrate 3 along the entire periphery of layer 1 and define Schottky barrier 9. The metal of layer 7 provides a higher barrier height with substrate 3 than the metal of layer 1, i. e., Schottky barrier 9 exhibits a larger reverse breakdown voltage and a larger forward threshold voltage than Schottky barrier 5. During inverse voltage operation, high electric fields at the periphery of metallic electrode 11 cause less unwanted reverse leakage currents across Schottky barrier 9 and the characteristics of the diode structure more closely approach the theoretical breakdown voltage of Schottky barrier 5. Electrical connections 13 and 15, respectively, are made to metallic electrode 11 and ohmic metallic contact 17 formed on the opposite surface of wafer 3.

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