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Coupled Magnetic Thin Film Element

IP.com Disclosure Number: IPCOM000091882D
Original Publication Date: 1968-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Jones, AS: AUTHOR [+2]

Abstract

A storage element comprising a copper conductor 1 surrounded by coupled magnetic films 2 and 3 is fabricated in steps. A 1000 angstroms thick magnetic film is vapor-deposited onto a smooth substrate 4 of silicon monoxide. A pore-free coat, less than 1/2 micron thick, of photoresist is applied to the magnetic film and exposed and developed to define an unprotected line on the magnetic film. Using the magnetic film as a cathode, copper conductor 1, which is 2 to 4 microns thick, is electroplated onto the unprotected line of magnetic material. Magnetic film 3, 1000 angstroms thick, is electroplated over copper conductor 1. A 2000 angstroms thick layer 4 of gold is electroplated over magnetic film 3. The photoresist on the lower magnetic film is dissolved away.

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Coupled Magnetic Thin Film Element

A storage element comprising a copper conductor 1 surrounded by coupled magnetic films 2 and 3 is fabricated in steps. A 1000 angstroms thick magnetic film is vapor-deposited onto a smooth substrate 4 of silicon monoxide. A pore- free coat, less than 1/2 micron thick, of photoresist is applied to the magnetic film and exposed and developed to define an unprotected line on the magnetic film. Using the magnetic film as a cathode, copper conductor 1, which is 2 to 4 microns thick, is electroplated onto the unprotected line of magnetic material. Magnetic film 3, 1000 angstroms thick, is electroplated over copper conductor 1. A 2000 angstroms thick layer 4 of gold is electroplated over magnetic film 3. The photoresist on the lower magnetic film is dissolved away. The regions of magnetic material, which are not protected by the gold layer 5, are etched away with a ferric chloride solution.

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