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Etchant for Conductors in Thin Film Memory

IP.com Disclosure Number: IPCOM000091883D
Original Publication Date: 1968-Jun-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Hobbs, DE: AUTHOR [+4]

Abstract

A thin-film magnetic memory element is fabricated by successively depositing, on smooth substrate 1, a thin magnetic film 2, a layer of copper 3 and a thin layer of gold 4. Resist pattern 5 is then formed on layer 4. The unprotected areas of layers 3 and 4 are etched away by spraying with an iodide solution having this composition Potassium Iodide 200 grms. Iodine 60 grms. Water 1 liter Temperature 75 degrees C.

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Etchant for Conductors in Thin Film Memory

A thin-film magnetic memory element is fabricated by successively depositing, on smooth substrate 1, a thin magnetic film 2, a layer of copper 3 and a thin layer of gold 4. Resist pattern 5 is then formed on layer 4. The unprotected areas of layers 3 and 4 are etched away by spraying with an iodide solution having this composition Potassium Iodide 200 grms.

Iodine 60 grms.

Water 1 liter

Temperature 75 degrees C.

Use of this etchant results in banking of layer 5 as indicated at 6 so that, when all the material shown shaded is removed, there remains a conductor with substantially chamfered edges. After removal of the resist and the copper iodide film on the chamfered edges by a 20% w/v solution of sodium thiosulphate, a second magnetic film is deposited, by electroplating or vacuum deposition, over the conductor to produce a closed film structure. If layer 4 is omitted, considerably less chamfering of the edges of the conductor is obtained.

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