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Semiconductor Semiconductor Schottky Barrier Tunnel Diode

IP.com Disclosure Number: IPCOM000091904D
Original Publication Date: 1968-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Chang, LL: AUTHOR [+3]

Abstract

Negative resistance characteristics are obtained in junctions composed of two degenerate semiconductor materials of opposite conduction types having different energy gaps. The heavily doped semiconductor material has a narrow energy gap and acts as if it were metal so that the junction between it and the less heavily doped semiconductor material having a wider energy gap defines a Schottky-barrier diode. In this device, the two semiconductors can be chosen separately to give negative resistance at different voltages. The fabrication involves only one evaporation or any other single depositing technique.

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Semiconductor Semiconductor Schottky Barrier Tunnel Diode

Negative resistance characteristics are obtained in junctions composed of two degenerate semiconductor materials of opposite conduction types having different energy gaps. The heavily doped semiconductor material has a narrow energy gap and acts as if it were metal so that the junction between it and the less heavily doped semiconductor material having a wider energy gap defines a Schottky-barrier diode. In this device, the two semiconductors can be chosen separately to give negative resistance at different voltages. The fabrication involves only one evaporation or any other single depositing technique.

This negative resistance device consists of two degenerate semiconductors of opposite types and with different energy gaps. The wide-gap semiconductor provides the tunneling barrier. The narrow gap semiconductor determines the voltage ranges where electron tunneling is allowable or forbidden. Drawing A shows the physical structure of the junction. The fabrication of the junction starts with a single crystal or a deposited film of slightly degenerate N-type or P-type wide-gap semiconductor 1. A second heavily degenerate P-type or N-type semiconductor 2 having a relatively small gap is deposited onto semiconductor 1 by a low-temperature technique such as evaporation. The device is completed by making ohmic contacts 3 and 4. An insulator or passivation layer 5 can be used to eliminate or to minimize leakage current around the junction edges.

The energy band diagram is shown in drawing B for the case of an N-type se...