Browse Prior Art Database

Chemical Vapor Deposition of Molybdenum

IP.com Disclosure Number: IPCOM000091906D
Original Publication Date: 1968-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR

Abstract

Metallic molybdenum is deposited on oxidized silicon wafers. Silicon wafers 1 mounted on substrate 2, which can be heated by RF induction heating, are established in a chamber 3. Wafers 1 are heated to a temperature of about 500 degrees C to 600 degrees C and are then subjected to the vapor of molybdenum tetrachloride from container 4 which is heated to a temperature of from 150 degrees C to 300 degrees C, Source material 5, prior to being permitted to enter into chamber 3 through valve 6, is purged with argon which enters container 4 at inlet 7. Simultaneously with the admission of the vapors molybdenum tetrachloride, hydrogen is also permitted to enter the chamber, which had previously been purged therewith, through inlet 8.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Chemical Vapor Deposition of Molybdenum

Metallic molybdenum is deposited on oxidized silicon wafers. Silicon wafers 1 mounted on substrate 2, which can be heated by RF induction heating, are established in a chamber 3. Wafers 1 are heated to a temperature of about 500 degrees C to 600 degrees C and are then subjected to the vapor of molybdenum tetrachloride from container 4 which is heated to a temperature of from 150 degrees C to 300 degrees C, Source material 5, prior to being permitted to enter into chamber 3 through valve 6, is purged with argon which enters container 4 at inlet 7. Simultaneously with the admission of the vapors molybdenum tetrachloride, hydrogen is also permitted to enter the chamber, which had previously been purged therewith, through inlet 8. As the mixture of molybdenum tetrachloride and hydrogen passes over heated wafers 1, molybdenum tetrachloride is reduced by the hydrogen to metallic molybdenum which is adherently deposited upon the surface of wafers 1. The by-products of the reaction, HCl and molybdenum trichloride, are continually swept out of the chamber 3 through exit 9. Molybdenum films having low resistivity are prepared as described, for example, films having resistivities of 6.5 to 7.1 micro-ohms.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]