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Indium Bond for Silicon Chip Attachment

IP.com Disclosure Number: IPCOM000091924D
Original Publication Date: 1968-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Giedd, GR: AUTHOR [+2]

Abstract

An indium bond between a semiconductor silicon chip and, for example, an alumina substrate, limits the stresses which normally result during thermal expansion. The backside of a silicon chip is reflowed on the substrate using pure indium by employing a hot plate at 325 degrees F so as to exceed the 314 degrees F melting point of indium. The entire assembly is then heat-soaked in an oven at 340 degrees F. Indium is a reflow metal which also possesses the property of cold flew so as to release stresses which normally result during thermal expansion. Also, the joint can be subjected to temperatures above the melting point of indium during the heat-soaking step without affecting the chip's position or the quality of the joint.

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Indium Bond for Silicon Chip Attachment

An indium bond between a semiconductor silicon chip and, for example, an alumina substrate, limits the stresses which normally result during thermal expansion. The backside of a silicon chip is reflowed on the substrate using pure indium by employing a hot plate at 325 degrees F so as to exceed the 314 degrees F melting point of indium. The entire assembly is then heat-soaked in an oven at 340 degrees F. Indium is a reflow metal which also possesses the property of cold flew so as to release stresses which normally result during thermal expansion. Also, the joint can be subjected to temperatures above the melting point of indium during the heat-soaking step without affecting the chip's position or the quality of the joint.

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