Browse Prior Art Database

Batch Fabricated Ferrite Technology

IP.com Disclosure Number: IPCOM000091982D
Original Publication Date: 1968-Jul-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 70K

Publishing Venue

IBM

Related People

Geldermans, P: AUTHOR

Abstract

A process for forming ferrite memory bits by batch fabrication techniques is provided. The process consists of the following steps. 1. Copper sheet 2 is laminated to a glass or plastic 4 or 2. Photoresist is applied to the copper strip which is followed by an etching step so that circular cavities 6 are produced as in B. 3. Cavities 6 are filled with ferrite slurry 8 which contains an organic material that hardens as in C. 4. Photoresist is applied to the ferrite doughnut and the center copper core and the outer copper areas are then etched away as in D. 5. Outer etched areas 10 are then filled with a hard-enable slurry of magnetically inert material as in E. 6.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Batch Fabricated Ferrite Technology

A process for forming ferrite memory bits by batch fabrication techniques is provided. The process consists of the following steps.
1. Copper sheet 2 is laminated to a glass or plastic 4 or
2. Photoresist is applied to the copper strip which is

followed by an etching step so that circular cavities

6 are produced as in B.
3. Cavities 6 are filled with ferrite slurry 8 which

contains an organic material that hardens as in C.
4. Photoresist is applied to the ferrite doughnut and

the center copper core and the outer copper areas

are then etched away as in D.
5. Outer etched areas 10 are then filled with a hard-enable

slurry of magnetically inert material as in E.
6. Center copper plug 12 is then etched away, and a

photoresist and presensitizing material 14 is applied

on the exposed ferrite as in F with glass 4 also

removed.
7. The photoresist is removed and the structure is fired

under appropriate conditions to keep it flat.
8. Conducting material 16 is deposited on the presensitized

line as in G and the chips are ready to be stacked onto

carrier plate 18 as in H.

The finished device takes the form of that shown in I with additional conductor 18 in the center.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]