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Formation of Ultrathin, Insulating Phosphosilicate Films on Silicon

IP.com Disclosure Number: IPCOM000092027D
Original Publication Date: 1968-Aug-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Laibowitz, RB: AUTHOR [+2]

Abstract

This process is for depositing continuous ultrathin phosphosilicate films on a silicon surface. Silicon wafer 1 is positioned in open-ended chamber 3 along which an inert atmosphere, e.g., nitrogen, is directed, as indicated by the arrows, and heated to approximately 800 degrees C by a heater element not shown. After a warm-up period, gaseous POCl(3) is introduced into the inert atmosphere, e.g., 0.14%. POCl(3) is reacted with the surface of wafer 1 and forms a continuous ultrathin phosphosilicate film 5. The thickness of film 5 is a function of reaction time, POCl(3) partial pressure, and moderately dependent upon the doping level of wafer 1.

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Formation of Ultrathin, Insulating Phosphosilicate Films on Silicon

This process is for depositing continuous ultrathin phosphosilicate films on a silicon surface. Silicon wafer 1 is positioned in open-ended chamber 3 along which an inert atmosphere, e.g., nitrogen, is directed, as indicated by the arrows, and heated to approximately 800 degrees C by a heater element not shown. After a warm-up period, gaseous POCl(3) is introduced into the inert atmosphere, e.g., 0.14%. POCl(3) is reacted with the surface of wafer 1 and forms a continuous ultrathin phosphosilicate film 5. The thickness of film 5 is a function of reaction time, POCl(3) partial pressure, and moderately dependent upon the doping level of wafer 1.

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