Browse Prior Art Database

Obtaining Epitaxy

IP.com Disclosure Number: IPCOM000092059D
Original Publication Date: 1968-Aug-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

d'Heurle, FM: AUTHOR

Abstract

The method is for depositing single-crystal metallic films. A stream of metallic evaporant, e.g., Al, indicated by arrows 1 is directed onto the surface of a single crystalline substrate 3, e.g., of NaCl, KCl, etc. Evaporant 1 can be formed by either evaporation, sputtering, or chemical vapor deposition techniques. Evaporant 1 is exposed to electron beam irradiation, indicated by arrows 5, to create ionized species which deposit onto the substrate. The presence of ionized species in the evaporant material facilitates the growth of a single-crystal film 7 at a reduced substrate temperature than previously required. For example, single-crystal Al films having ›100| orientation are deposited by evaporation techniques on NaCl and KCl substrates at temperatures in the range of 150 degrees C.

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Obtaining Epitaxy

The method is for depositing single-crystal metallic films. A stream of metallic evaporant, e.g., Al, indicated by arrows 1 is directed onto the surface of a single crystalline substrate 3, e.g., of NaCl, KCl, etc. Evaporant 1 can be formed by either evaporation, sputtering, or chemical vapor deposition techniques. Evaporant 1 is exposed to electron beam irradiation, indicated by arrows 5, to create ionized species which deposit onto the substrate.

The presence of ionized species in the evaporant material facilitates the growth of a single-crystal film 7 at a reduced substrate temperature than previously required. For example, single-crystal Al films having >100| orientation are deposited by evaporation techniques on NaCl and KCl substrates at temperatures in the range of 150 degrees C. Ionization of the evaporant similarly enhances the epitaxial deposition of semiconductor films and, also, insulating films, e.g., MgO, NaCl, etc.

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