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Electrothermal Stressing Jig

IP.com Disclosure Number: IPCOM000092060D
Original Publication Date: 1968-Aug-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Balk, P: AUTHOR [+3]

Abstract

This sample holder facilitates measurement of MOS capacitance and its stability under electrothermal stress. The sample holder comprises stainless steel plates 1 and 3 and a plurality of rigid hollow ceramic members 5 and 7. Each plurality of members is arranged in a same plane and maintained in fixed relative position by clamps 9 and 11. Tungsten leads 13 and 15 leading from test equipment, not shown, are threaded through members 5 and 7 respectively. Leads 13 are bent over and retained within clamping structure 17. Leads 15 are retained within clamping structure 19. Also, plates 1 and 3 are retained in spaced parallel relationship by clamping structures 17 and 19.

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Electrothermal Stressing Jig

This sample holder facilitates measurement of MOS capacitance and its stability under electrothermal stress. The sample holder comprises stainless steel plates 1 and 3 and a plurality of rigid hollow ceramic members 5 and 7. Each plurality of members is arranged in a same plane and maintained in fixed relative position by clamps 9 and 11. Tungsten leads 13 and 15 leading from test equipment, not shown, are threaded through members 5 and 7 respectively. Leads 13 are bent over and retained within clamping structure 17. Leads 15 are retained within clamping structure 19. Also, plates 1 and 3 are retained in spaced parallel relationship by clamping structures 17 and 19.

Each lead 13 and 15 terminates at right-angle bends which extend through apertures in ceramic wafer 25 fixedly positioned in plate 3. Semiconductor wafer 27 is positioned between plates 1 and 3 such that leads 13 and 15 passing through wafer 25 contact appropriate land structures on wafer 27. Leads 13 and 15 are brought into contact with land structures on wafer 27 and through wafer 25 by press screws 29 and 31 carried in plates 33 and 35 retained in clamping structures 17 and 19 respectively. Leads 13 and 15 can be lifted to allow insertion of wafer 27 between plates 1 and 3, plate 1 being cut away to facilitate positioning of wafer 27 with respect to leads 13 and 15.

When the sample holder is elevated to temperatures to effect the measured MOS characteristics, leads 13 a...