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Sputtering Uniform Thickness EuO Films

IP.com Disclosure Number: IPCOM000092063D
Original Publication Date: 1968-Aug-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

DeLuca, JC: AUTHOR [+3]

Abstract

Films of EuO from a solid source of EuO are deposited upon a substrate by RF sputtering. EuO source 1, serving as a cathode in a conventional sputtering system and partially shielded by ground shield 2, is positioned to provide a gap 3 of about three-eights of an inch to about one half of an inch between it and anode or substrate 4. An inert gas having a pressure of between 40-60 microns is admitted into the system and an incident power of 100-500 watts is applied. The deposited films are uniform in thickness and composition, there being no Eu(2)O(3) present. X-ray diffraction, optical absorption and low temperature magnetic measurements indicate the deposited EuO films are equivalent to and, in some respects, superior to films deposited by conventional vacuum deposition processes.

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Sputtering Uniform Thickness EuO Films

Films of EuO from a solid source of EuO are deposited upon a substrate by RF sputtering. EuO source 1, serving as a cathode in a conventional sputtering system and partially shielded by ground shield 2, is positioned to provide a gap 3 of about three-eights of an inch to about one half of an inch between it and anode or substrate 4. An inert gas having a pressure of between 40-60 microns is admitted into the system and an incident power of 100-500 watts is applied. The deposited films are uniform in thickness and composition, there being no Eu(2)O(3) present. X-ray diffraction, optical absorption and low temperature magnetic measurements indicate the deposited EuO films are equivalent to and, in some respects, superior to films deposited by conventional vacuum deposition processes.

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