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El Junctions by Co Doping with More than One Element

IP.com Disclosure Number: IPCOM000092067D
Original Publication Date: 1968-Aug-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

Electroluminescent junctions in semiconductors, e.g., GaAs, are fabricated by doping with a donor element in the N-type region and with an acceptor element in the P-type region. A method to accomplish this is to diffuse Zn, an acceptor, into an N-type GaAs substrate doped with Se, Te, or Sn, donors. Mg, Cd, Ca, and Hg are not adequate substitutes for Zn.

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El Junctions by Co Doping with More than One Element

Electroluminescent junctions in semiconductors, e.g., GaAs, are fabricated by doping with a donor element in the N-type region and with an acceptor element in the P-type region. A method to accomplish this is to diffuse Zn, an acceptor, into an N-type GaAs substrate doped with Se, Te, or Sn, donors. Mg, Cd, Ca, and Hg are not adequate substitutes for Zn.

The combination of Cd and Zn is superior to Zn alone from the point of view of electroluminescence. When Zn and Cd are diffused together into N-type GaAs, the electroluminescent properties of the junction are better than when either Zn or Cd is diffused alone. The diffusion of the Zn and Cd either can be performed sequentially in either order or can be performed simultaneously.

Lasers made by the co-diffusion of Zn and Cd usually have 77 degrees K threshold current densities 20% lower than when Zn alone is diffused. CW peak power output at 77 degrees K is usually 10% higher.

The improvement is greater for spontaneous emission in electroluminescent diodes. External quantum efficiencies are obtainable at room temperature from 30% to 100% higher for the diodes made by the co-diffusion of Zn and Cd compared with the diodes made by the diffusion of Zn only. The procedure is as follows: In a silica tube 11 mm ID and 75 mm length, N-type-GaAs wafers are sealed off with 5 mg Cd(3)As(2) or CdAs(2) plus 5 mg ZnAs(2). The tube is heated at 750 degrees C for 16 hours then...