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Frequency Modulation of Gunn Oscillators

IP.com Disclosure Number: IPCOM000092080D
Original Publication Date: 1968-Aug-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Statz, H: AUTHOR [+2]

Abstract

The frequency of a Gunn oscillator corresponding to the reciprocal of the electron transit time is controlled by shifting the nucleation point of the traveling high-field domains launched. An N-type GaAs body with ohmic cathode and anode contacts on its ends is provided with a rectifying metal-semiconductor Schottky contact control electrode. Also an MOS structure or a PN junction electrode can be used. To create a higher field exceeding the critical field strength, the section adjacent to the anode is either smaller in cross section or lighter doped or both. Thus, this part of the body shows a lower conductivity. The point of smallest channel width exhibiting the highest field is formed by the distance between the edge of the depletion zone and the lower body surface.

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Frequency Modulation of Gunn Oscillators

The frequency of a Gunn oscillator corresponding to the reciprocal of the electron transit time is controlled by shifting the nucleation point of the traveling high-field domains launched. An N-type GaAs body with ohmic cathode and anode contacts on its ends is provided with a rectifying metal-semiconductor Schottky contact control electrode. Also an MOS structure or a PN junction electrode can be used. To create a higher field exceeding the critical field strength, the section adjacent to the anode is either smaller in cross section or lighter doped or both. Thus, this part of the body shows a lower conductivity. The point of smallest channel width exhibiting the highest field is formed by the distance between the edge of the depletion zone and the lower body surface. The launched domains travel along the low-conductivity part of the body and consecutively reach the anode. Their nucleation point is shifted with varying the size of the depletion zone by control signals applied. Thus the electrical length of the active part of the device is altered causing a frequency modulation of the generated Gunn oscillations.

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