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WF(6) Process to Produce Adherent Low Resistivity Films of Tungsten

IP.com Disclosure Number: IPCOM000092124D
Original Publication Date: 1968-Sep-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR

Abstract

By using Al(2)O(3) in any form, e.g., sputtered, polycrystalline, or single crystal sapphire, as the substrate, extremely adherent films of tungsten are deposited by the WF(6) process. Films of W, deposited at temperatures between 300 degrees C and 550 degrees C on sputtered Al(2)O(3) and on single crystal sapphires, passes vigorous tape tests.

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WF(6) Process to Produce Adherent Low Resistivity Films of Tungsten

By using Al(2)O(3) in any form, e.g., sputtered, polycrystalline, or single crystal sapphire, as the substrate, extremely adherent films of tungsten are deposited by the WF(6) process. Films of W, deposited at temperatures between 300 degrees C and 550 degrees C on sputtered Al(2)O(3) and on single crystal sapphires, passes vigorous tape tests.

When tungsten film is deposited by the hydrogen reduction of WF(6) on SiO(2) substrate, there often is marginal adhesion of the film to the substrate. The adhesion of W on SiO(2) varies from in situ peeling to failure to pass an etching test and a mild tape test.

Although the passing of an etching test is sufficient for electrical and thickness measurements for film characterization, it is not sufficient for device fabrication. A device requirement is for the tungsten metal film to be strongly adherent to the insulating substrate film.

There is a relationship between the marginal adhesion of the tungsten films on SiO(2) and the high resistivity of the film on the surface. The resistivity of tungsten films on Al(2)O(3) or sapphire is lower than on SiO(2). Therefore, the fluoride process has usefulness in the fabrication of devices and integrated circuits. The advantages inherent in the WF(6) process, e.g., rapid deposition rates, gas metering, clean reaction, high-purity deposits with low resistivities, and the broad deposition temperature range, can be obt...