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Preparation of EuO Thin Films by Vapor Solid Reaction

IP.com Disclosure Number: IPCOM000092130D
Original Publication Date: 1968-Sep-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Gambino, RJ: AUTHOR

Abstract

Thin films of EuO are utilizable for magneto-optical devices. There are several nonequilibrium techniques for EuO film deposition, e.g., vacuum evaporation and RF sputtering. It is difficult to control the reproducibility of the oxidation state and the related magneto-optical properties of the product films by previous techniques. This method produces EuO film under chemical equilibrium conditions which controls the oxidation state of the Eu.

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Preparation of EuO Thin Films by Vapor Solid Reaction

Thin films of EuO are utilizable for magneto-optical devices. There are several nonequilibrium techniques for EuO film deposition, e.g., vacuum evaporation and RF sputtering. It is difficult to control the reproducibility of the oxidation state and the related magneto-optical properties of the product films by previous techniques. This method produces EuO film under chemical equilibrium conditions which controls the oxidation state of the Eu.

Several cleaved single crystals 10 of MgO and about 0.3 gms of Eu metal 12 in crucible 13 are placed in tantalum crucible 14, encapsulated in quartz tube 16 and then sealed under 10/-6/ vacuum. The EuO film is formed by heating the crucible to about 800 degrees C to produce a vapor pressure of Eu metal of about 1 mm Hg. The film forms on the MgO substrates with very little EuO deposition on the walls of crucible 14. The film is formed by the reaction Eu(v) + MgO(s) -> EuO(s) + Mg(v).

The film thickness is controlled by varying the reaction time and temperature. At 750 degrees C, the film thickness is 2300 angstroms after 16 minutes of reaction and 6600 angstroms after 104 minutes of reaction, the thickness being based on the film's optical density. The properties of EuO prepared by this vapor-solid reaction and bulk single crystal EuO prepared by vacuum evaporation are compared as follows:

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