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Gating Circuit

IP.com Disclosure Number: IPCOM000092151D
Original Publication Date: 1968-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Moore, RL: AUTHOR

Abstract

The resistance R of bit sense line 10 of a 2 1/2-D memory can be used to initiate the gating that connects line 10 to common sense amplifier 18. Sense lines 10...16 are attached to amplifier 18 through separate preamplifiers consisting of transistors T1A...T4B. The bit drive current in the selected line 10 causes a voltage across that sense line that biases transistors T1B and T1A on by raising the bases of those transistors above ground. Thus line 10 is connected to amplifier 18 through transistors T1A and T1B. The bases of all other transistors T2A, etc., remain at ground potential, thus maintaining the other bit lines 12...16 isolated from amplifier 18 to reduce the noise reaching such amplifier.

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Gating Circuit

The resistance R of bit sense line 10 of a 2 1/2-D memory can be used to initiate the gating that connects line 10 to common sense amplifier 18. Sense lines 10...16 are attached to amplifier 18 through separate preamplifiers consisting of transistors T1A...T4B. The bit drive current in the selected line 10 causes a voltage across that sense line that biases transistors T1B and T1A on by raising the bases of those transistors above ground. Thus line 10 is connected to amplifier 18 through transistors T1A and T1B. The bases of all other transistors T2A, etc., remain at ground potential, thus maintaining the other bit lines 12...16 isolated from amplifier 18 to reduce the noise reaching such amplifier.

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