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Depositioning Uniform Molybdenum Films at Low Temperatures

IP.com Disclosure Number: IPCOM000092168D
Original Publication Date: 1968-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR

Abstract

In the deposition of uniform molybdenum films at low temperatures from Mo(CO)(6), a substrate 1, which is heated in a temperature in the range of from about 200 degrees C to about 300 degrees C, is placed in reaction chamber 2 which is evacuated through valve 3. Hydrogen from container 4 is allowed to flow into chamber 2 via valve 5 at a rate of about 10 cc/min. until a pressure of about 0.01 min is reached. Nitrogen from container 6 is allowed to flow into chamber 2 through valve 7 until a pressure of 1 min. is reached within chamber 2. Valve 5 is closed and valve 8 is opened to permit H(2) to flow into container 9 where it mixes with Mo(CO)(6) and acts as a carrier gas therefor. The H(2)-Mo(CO)(6) mixture is then permitted to flow into chamber 2 where Mo is deposited on hot substrate 1.

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Depositioning Uniform Molybdenum Films at Low Temperatures

In the deposition of uniform molybdenum films at low temperatures from Mo(CO)(6), a substrate 1, which is heated in a temperature in the range of from about 200 degrees C to about 300 degrees C, is placed in reaction chamber 2 which is evacuated through valve 3. Hydrogen from container 4 is allowed to flow into chamber 2 via valve 5 at a rate of about 10 cc/min. until a pressure of about 0.01 min is reached. Nitrogen from container 6 is allowed to flow into chamber 2 through valve 7 until a pressure of 1 min. is reached within chamber
2. Valve 5 is closed and valve 8 is opened to permit H(2) to flow into container 9 where it mixes with Mo(CO)(6) and acts as a carrier gas therefor. The H(2)- Mo(CO)(6) mixture is then permitted to flow into chamber 2 where Mo is deposited on hot substrate 1. After 1 minute of flowing the H(2)-Mo(CO)(6) mixture into chamber 2, valve 7 is closed to stop the further flow of N(2) into the chamber. Deposition of Mo is continued until the desired film thickness is obtained. The advantage of the process is that uniform films can be deposited at temperatures below 300 degrees C.

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