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Etching Off of the Brown Layer Formed during Oxygen Poor Boron Diffusion

IP.com Disclosure Number: IPCOM000092173D
Original Publication Date: 1968-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hager, PL: AUTHOR

Abstract

During boron diffusion into silicon wafer in an oxygen poor environment, a brown insoluble layer forms on the surface of the silicon wafer. This brown insoluble layer can be removed in light by contacting the layer with the solution comprising 7 parts nitric acid, 2 parts acetic acid as buffers and 1 part hydrofluoric acid.

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Etching Off of the Brown Layer Formed during Oxygen Poor Boron Diffusion

During boron diffusion into silicon wafer in an oxygen poor environment, a brown insoluble layer forms on the surface of the silicon wafer. This brown insoluble layer can be removed in light by contacting the layer with the solution comprising 7 parts nitric acid, 2 parts acetic acid as buffers and 1 part hydrofluoric acid.

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