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Ferroelectric Material

IP.com Disclosure Number: IPCOM000092175D
Original Publication Date: 1968-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Michaelsen, JD: AUTHOR

Abstract

For applications involving information storage, ferroelectrics are desirable where their coercive energy is low, 20-40 KV/cm, the spontaneous polarization is low, 5-10 microcoulombs/cm/2/, and where the hystereses loop of ceramic films is reasonably square, K is 0.7-0.8. The need to have a low coercive energy and spontaneous polarization results in the area of the hystereses loop being small. Hence, the energy dissipated during cycling of the storage medium is kept to a minimum.

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Ferroelectric Material

For applications involving information storage, ferroelectrics are desirable where their coercive energy is low, 20-40 KV/cm, the spontaneous polarization is low, 5-10 microcoulombs/cm/2/, and where the hystereses loop of ceramic films is reasonably square, K is 0.7-0.8. The need to have a low coercive energy and spontaneous polarization results in the area of the hystereses loop being small. Hence, the energy dissipated during cycling of the storage medium is kept to a minimum.

A solid solution of PbTiO(3) and PbZrO(3) would be a desirable ferroelectric composition for information storage if the spontaneous polarization of such composition was not high, i.e., 15-20 mu c/cm/2/. If PbFei/(2)Nbi/(2)O(3) is added in the preparation of this composition, the resulting composition significantly lowers the spontaneous polarization. This is realized without either significantly modifying the squareness of the hysteresis loop which films of the composition exhibit or significantly raising the coercive energy.

The table indicates the properties of films prepared from compositions of the proportions 0.4 PbTiO(3), 0.4 PbZrO(3), and 0.2 PbFe(x)Nbi-(x)O(3) where X is within a range of 0.495 and 0.505.

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