Browse Prior Art Database

Manufacture of Semiconductor Devices by Ion Bombardment

IP.com Disclosure Number: IPCOM000092237D
Original Publication Date: 1968-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Gardner, EE: AUTHOR [+2]

Abstract

The method utilizes a minimum of ion bombardment operations for producing semiconductor devices which include a buried subcollector layer.

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Manufacture of Semiconductor Devices by Ion Bombardment

The method utilizes a minimum of ion bombardment operations for producing semiconductor devices which include a buried subcollector layer.

P and N-type ions can be injected into various regions of a semiconductor wafer by ion bombardment. Such regions can be formed by bombardment with high-energy ions, such as those of boron, arsenic, phosphorus, and antimony.

Two bombardment operations are required to produce a transistor structure having the indicated profile. The first bombardment is made with a high-energy N-type impurity. Such operation produces in an N-type wafer an N+ buried layer 10 and an N+ type region 12 adjacent the surface of the semiconductor. The concentration of ions adjacent to surface is the result of the amorphous scattering effect.

The buried subcollector is formed by the channeling effect. Subsequently it is bombarded with P-type ions of lower energy to form base region 14. Thus the subcollector and emitter regions are formed by a single bombardment utilizing the channeling effect and the amorphous scattering effect which locate the ions at the various depths in the wafers.

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