Browse Prior Art Database

Alignment of Ion Sources

IP.com Disclosure Number: IPCOM000092238D
Original Publication Date: 1968-Oct-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gardner, EE: AUTHOR [+2]

Abstract

This method determines the ion distribution in an ion beam. Ion sources have many applications. In semiconductor work they are used for ion implantation, a technique used to make semiconductor junctions. One major problem of all ions sources is inhomogeneous intensity distribution in the beam and its correction. In this method, a single crystal of good perfection is bombarded with the ion beam being investigated. The beam causes the silicon wafer to become damaged, with most damage occurring in the more concentrated areas of the beam. Subsequently an X-ray topograph of the crystal is recorded. If the beam has a hot spot it produces more damage in the crystal. This is shown by the topograph which indicates the ion distribution.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Alignment of Ion Sources

This method determines the ion distribution in an ion beam. Ion sources have many applications. In semiconductor work they are used for ion implantation, a technique used to make semiconductor junctions. One major problem of all ions sources is inhomogeneous intensity distribution in the beam and its correction. In this method, a single crystal of good perfection is bombarded with the ion beam being investigated. The beam causes the silicon wafer to become damaged, with most damage occurring in the more concentrated areas of the beam. Subsequently an X-ray topograph of the crystal is recorded. If the beam has a hot spot it produces more damage in the crystal. This is shown by the topograph which indicates the ion distribution.

1