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Technique to Improve RF Sputtering Rate

IP.com Disclosure Number: IPCOM000092299D
Original Publication Date: 1968-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Tsui, RTC: AUTHOR

Abstract

These techniques are for improving the sputtering rate of materials in conventional RF sputtering apparatus. Either sputtering rate or deposition rate or both can be increased by decreasing the thickness of the dielectric cathode. Also, if a cathode of higher dielectric constant is used, the sputtering rate can also be increased. In conventional RF sputtering apparatus, a relatively thick, 1/4'' cathode material, i.e., SiO(2), is generally used. If the thickness of the cathode is reduced by a factor of 4, either the sputtering rate or the deposition rate or both can be increased by a factor of 1.5 to 3 using identical sputtering conditions as when the 1/4'' cathode is used.

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Technique to Improve RF Sputtering Rate

These techniques are for improving the sputtering rate of materials in conventional RF sputtering apparatus. Either sputtering rate or deposition rate or both can be increased by decreasing the thickness of the dielectric cathode. Also, if a cathode of higher dielectric constant is used, the sputtering rate can also be increased. In conventional RF sputtering apparatus, a relatively thick, 1/4'' cathode material, i.e., SiO(2), is generally used. If the thickness of the cathode is reduced by a factor of 4, either the sputtering rate or the deposition rate or both can be increased by a factor of 1.5 to 3 using identical sputtering conditions as when the 1/4'' cathode is used.

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