Browse Prior Art Database

Thin Film Universal Logic Block

IP.com Disclosure Number: IPCOM000092466D
Original Publication Date: 1966-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 3 page(s) / 51K

Publishing Venue

IBM

Related People

Gamblin, RL: AUTHOR [+3]

Abstract

Universal thin-film logic block UB, drawing 2, has as its basic element a coupled hard axis thin-film device TFD having its bistable magnetization vectors MV aligned with its easy axis. This device can appear as a continuous surface having a length much greater than its width. Portions of the thin-film element act as storage sections. Intervening portions separate the stable MV established by a writing device, not shown, superimposed over the TFD. This TFD can also appear as a plurality of discrete thin-film elements separated by nonmagnetic areas. Drawing 1 shows the relative absorption of a microwave signal MS in a TFD is dependent upon the frequency of MS. If an external magnetic field MF is applied, the resonant frequency SF of TFD is altered.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 49% of the total text.

Page 1 of 3

Thin Film Universal Logic Block

Universal thin-film logic block UB, drawing 2, has as its basic element a coupled hard axis thin-film device TFD having its bistable magnetization vectors MV aligned with its easy axis. This device can appear as a continuous surface having a length much greater than its width. Portions of the thin-film element act as storage sections. Intervening portions separate the stable MV established by a writing device, not shown, superimposed over the TFD. This TFD can also appear as a plurality of discrete thin-film elements separated by nonmagnetic areas. Drawing 1 shows the relative absorption of a microwave signal MS in a TFD is dependent upon the frequency of MS. If an external magnetic field MF is applied, the resonant frequency SF of TFD is altered. If a positive MF is applied, SF shifts up and the MS passing over is attenuated more. Conversely, when a negative MF is applied, the attenuation shifts down and more MF becomes transmitted.

In drawing 2, UB is shown employing MS source 1, microwave distribution line 3, and a plurality of branch lines BL 5 connected in common with line 3. All lines are either strip lines or coaxial cables. TFD's 7 are shown as continuous surfaces. BL's 5 are threaded through the TFD central bores and are terminated in diode detectors DD 9. The latter are connected in common with threshold amplifier 11. This responds to logic input signals satisfying the UB configuration. Pulse generators supply pulses A, B, C, and D and are connected to perturb lines PL 15 which are orthogonal to BL's 5. Pulses A, B, and C perform a reading function. Pulse D performs a gating function with its gate line GL 19. PL's 15 terminate at ground. The writing device is superimposed upon BL's 5 and PL's 15 in such a manner so as to write a MV parallel to the easy axis or width of TFD at the intersection of each BL with PL. The writing device writes 1's and 0's at the intersection of each BL 5 with a PL
15. These MV's are represented in the drawing by arrows 20 having an upwardly directed arrow for a 1 and a downwardly directed arrow for a
0. GL 19 is also placed orthogonal to BL's 5 and transmits a negative-going gating pulse which activates the function of UB. Since an intersection of BL 5 and GL 19 also acts to modulate the microwave power signal flowing through BL 5, this intersection acts as a gating arrangement for that particular BL 5. The intensity of the gate pulse is fixed in such a manner as to completely negate, on those branch lines not selected, the effect of the modulation caused by the intersection of the remaining storage sections of TFD. For example, on the first two BL's in B, a negative magnetization vector is stored at two locations on GL 19. In this configuration the logic instrumented in the associated storage section is selected while the third location on GL 19 has a positive magnetization vector as indicated by the arrow 20 and the power level of this particular branch line i...