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Fast Recovery Pulse Generators

IP.com Disclosure Number: IPCOM000092503D
Original Publication Date: 1966-Nov-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Seitzer, D: AUTHOR

Abstract

In high repetition rate pulse generators it is desirable to reduce the time needed to recover after the trailing edge of each pulse. A duty cycle of about 80% is achieved with this circuit.

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Fast Recovery Pulse Generators

In high repetition rate pulse generators it is desirable to reduce the time needed to recover after the trailing edge of each pulse. A duty cycle of about 80% is achieved with this circuit.

Upon application of a positive pulse to the input, tunnel diode TD switches down from its high-voltage state, thus transferring current from transistor T1 to transistor T2. Simultaneously, the current I1 is cut off. As a consequence the voltage at point P starts decreasing exponentially towards the negative voltage VN. As soon as the voltage at P has fallen sufficiently below the negative voltage VS the current through transistor T3 increases. Such action causes TD to return to its high-voltage state and switches T1 and T2 back to their initial states. The current I1 then raises the voltage at P towards VN + RI1.

As soon as the voltage at P surpasses VR + VK, reference voltage plus knee voltage of D, the latter starts conducting and clamps the potential at point P to VR. Since VR << VN + RI1 the exponential recovery is interrupted a very short time after its commencement and the circuit is ready for a new cycle.

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