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Vapor Deposition of Silicon Dioxide

IP.com Disclosure Number: IPCOM000092515D
Original Publication Date: 1966-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Seto, DK: AUTHOR [+2]

Abstract

A mixture of vapors of an alcohol, silicon tetrachloride and hydrogen is used to produce a coating of silicon dioxide onto a substrate such as a silicon monocrystalline wafer. The advantage of the vapor deposition of silicon dioxide onto such a wafer is that it can be used in combination with an epitaxial vapor deposition of silicon onto the wafer in the same apparatus. Typically, silicon is deposited from silicon tetrachloride vapor. The addition of the oxidant to the vapor is all that is required to change the deposition from silicon to silicon dioxide without exposing the freshly vapor-deposited silicon to another atmosphere. The temperature of the reaction is between 800-1000 degrees C. and deposition rates are reasonably high.

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Vapor Deposition of Silicon Dioxide

A mixture of vapors of an alcohol, silicon tetrachloride and hydrogen is used to produce a coating of silicon dioxide onto a substrate such as a silicon monocrystalline wafer. The advantage of the vapor deposition of silicon dioxide onto such a wafer is that it can be used in combination with an epitaxial vapor deposition of silicon onto the wafer in the same apparatus. Typically, silicon is deposited from silicon tetrachloride vapor. The addition of the oxidant to the vapor is all that is required to change the deposition from silicon to silicon dioxide without exposing the freshly vapor-deposited silicon to another atmosphere. The temperature of the reaction is between 800-1000 degrees C. and deposition rates are reasonably high.

A typical reaction is made in a chamber maintained at approximately 900 degrees C. The main hydrogen flow is approximately 10 liters per minute. About 1500 cc per minute of hydrogen is bubbled through an isopropyl alcohol bath and about 120 cc per minute of hydrogen is bubbled through a silicon tetrachloride bath. The reaction deposits 43,000 angstroms of silicon dioxide, in a time of approximately 30 minutes, onto a silicon wafer.

To demonstrate that alcohol is the main constituent, in another example about 1500 cc per minute of hydrogen is bubbled through tertiary butyl alcohol rather than isopropyl alcohol. The reaction deposits 5,000 angstroms of silicon dioxide onto a silicon wafer in a time of...