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Silicon Oxide Etchant

IP.com Disclosure Number: IPCOM000092518D
Original Publication Date: 1966-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bolin, HR: AUTHOR

Abstract

An etchant is provided for the selective removal of silicon oxide layers of the type that are found between conductive and magnetic materials of a magnetic storage device. The etchant removes the silicon oxide without damage to either the conductive or magnetic materials. The etchant includes 12 ml NH(4)F, 1000 ml H(2)O, and 10% (by volume) NH(4) OH (100 ml).

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Silicon Oxide Etchant

An etchant is provided for the selective removal of silicon oxide layers of the type that are found between conductive and magnetic materials of a magnetic storage device. The etchant removes the silicon oxide without damage to either the conductive or magnetic materials. The etchant includes 12 ml NH(4)F, 1000 ml H(2)O, and 10% (by volume) NH(4) OH (100 ml).

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