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Light Emission of PN Junction

IP.com Disclosure Number: IPCOM000092621D
Original Publication Date: 1966-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 60K

Publishing Venue

IBM

Related People

Yeh, TH: AUTHOR [+3]

Abstract

A silicon PN junction device when reverse-biased to breakdown emits light. However, objectionable, random, high-intensity light spots along the junction often appear before the avalanche breakdown occurs. Device 1 overcomes this problem of random light spots. Identical diodes 2 and 3 are made in a semiconductor wafer by diffusing, for example, phosphorus into a P-type doped monocrystalline silicon material 4. A third diode 5 overlaps diodes 2 and 3. Diode 5 has a higher doping concentration, but a much shallower junction than diodes 2 and 3. Ohmic contacts 6 and 7 are made to diodes 2 and 3. When a reverse bias is applied to contacts 6 and 7, two uniform light patterns occur at the discretely-controlled junction locations of diode 5. The breakdown voltage is much lower than the case of the single diode junction.

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Light Emission of PN Junction

A silicon PN junction device when reverse-biased to breakdown emits light. However, objectionable, random, high-intensity light spots along the junction often appear before the avalanche breakdown occurs. Device 1 overcomes this problem of random light spots. Identical diodes 2 and 3 are made in a semiconductor wafer by diffusing, for example, phosphorus into a P-type doped monocrystalline silicon material 4. A third diode 5 overlaps diodes 2 and 3. Diode 5 has a higher doping concentration, but a much shallower junction than diodes 2 and 3. Ohmic contacts 6 and 7 are made to diodes 2 and 3. When a reverse bias is applied to contacts 6 and 7, two uniform light patterns occur at the discretely-controlled junction locations of diode 5. The breakdown voltage is much lower than the case of the single diode junction. The device structure can be effectively utilized with other semi-conductor materials and with other dopants.

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