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Monolithic Circuit Interconnections

IP.com Disclosure Number: IPCOM000092624D
Original Publication Date: 1966-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 55K

Publishing Venue

IBM

Related People

Seto, DK: AUTHOR [+2]

Abstract

The dielectric isolation technique can be used to provide any number of overpass conductors to interconnect a multitude of semiconductor devices within a monolithic structure. Dielectric isolated monolithic device 1 includes a polycrystalline silicon base layer 2. The latter has an isolating silicon dioxide layer, silicon nitride plus silicon dioxide layer or any other suitable isolating layer 3 electrically insulating layer 2 from monocrystalline regions 4. These 4 are separated from one another by layer 3.

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Monolithic Circuit Interconnections

The dielectric isolation technique can be used to provide any number of overpass conductors to interconnect a multitude of semiconductor devices within a monolithic structure. Dielectric isolated monolithic device 1 includes a polycrystalline silicon base layer 2. The latter has an isolating silicon dioxide layer, silicon nitride plus silicon dioxide layer or any other suitable isolating layer 3 electrically insulating layer 2 from monocrystalline regions 4. These 4 are separated from one another by layer 3.

A concentric ring pattern of monocrystalline silicon material 5 is dielectrically isolated by layer 3 between component areas of device 1. The concentric pattern then serves as an underpass trunk of conductors for device 1. For the best conduction, the concentric rings of material 5 are opened during a highly doped diffusion, such as the emitter diffusion, or diffused separately.

Silicon dioxide or other suitable insulating layer 6 is then deposited by conventional techniques over the entire upper surface of device 1. Openings 7 are then made in layer 6 to the rings of material 5 by conventional etching techniques and electrical contacts are made to the concentric patterns 5 by conductors 8. The latter and overpass conductors 9 can then be deposited by conventional techniques such as blanket metallic deposition and subtractive etch or by deposition through suitable mask structures.

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