Browse Prior Art Database

Insulated Electrode of Adjustable Potential

IP.com Disclosure Number: IPCOM000092627D
Original Publication Date: 1966-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Walker, EJ: AUTHOR

Abstract

Electrode 1 supported on semiconductor wafer 3 is divided into regions I and II. The respective thicknesses of insulating layer 5 and metal layer 7 in such regions are chosen such that an incident electron beam penetrates into and through layer 5 in region I but does not penetrate through layer 5 in region II. Electrode 1 is charged by directing an electron beam at region II to accumulate a charge on layer 7. Electrode 1 is discharged by directing an electron beam at region I to induce conductivity in layer 5 and discharge accumulated charge on layer 7. Electrode 1 can be used, as an on-off voltage source, for example, to control conduction in a field effect transistor by connecting layer 7 to the gate electrode of such device.

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Insulated Electrode of Adjustable Potential

Electrode 1 supported on semiconductor wafer 3 is divided into regions I and
II. The respective thicknesses of insulating layer 5 and metal layer 7 in such regions are chosen such that an incident electron beam penetrates into and through layer 5 in region I but does not penetrate through layer 5 in region II. Electrode 1 is charged by directing an electron beam at region II to accumulate a charge on layer 7. Electrode 1 is discharged by directing an electron beam at region I to induce conductivity in layer 5 and discharge accumulated charge on layer 7. Electrode 1 can be used, as an on-off voltage source, for example, to control conduction in a field effect transistor by connecting layer 7 to the gate electrode of such device.

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