Browse Prior Art Database

Integrated Mark Sensing Device

IP.com Disclosure Number: IPCOM000092629D
Original Publication Date: 1966-Dec-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Rutz, RF: AUTHOR

Abstract

A compact optical mark sensor is shown in A and B as comprising light-emitting junction 1 and light-collecting junction 2 defined in adjacent relationship in GaAs wafer 3. If desired, a plurality of mark sensors can be defined in integrated fashion in wafer 3. Junction 1 is forward biased by source 4 connected at metallic contacts 5 and 6. Junction 2 is reverse biased by source 7 connected at metallic contacts 8 and 9. In A, portions of contacts 6 and 9 are formed over insulating layers 10 and 11, respectively, to prevent shorting of junctions 1 and 2, respectively. Tape 12, containing information marks 13 having distinctive reflecting characteristics, passes adjacent junctions 1 and 2.

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Integrated Mark Sensing Device

A compact optical mark sensor is shown in A and B as comprising light- emitting junction 1 and light-collecting junction 2 defined in adjacent relationship in GaAs wafer 3. If desired, a plurality of mark sensors can be defined in integrated fashion in wafer 3. Junction 1 is forward biased by source 4 connected at metallic contacts 5 and 6. Junction 2 is reverse biased by source 7 connected at metallic contacts 8 and 9. In A, portions of contacts 6 and 9 are formed over insulating layers 10 and 11, respectively, to prevent shorting of junctions 1 and 2, respectively. Tape 12, containing information marks 13 having distinctive reflecting characteristics, passes adjacent junctions 1 and 2. Modulation of the intensity of light reflected from junction 1 to junction 2 varies the current across junction 2 so that an information signal is developed across load 14.

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