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Preferential Ion Etch Technique with Reactive Sputtering

IP.com Disclosure Number: IPCOM000092656D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Tsui, RT: AUTHOR

Abstract

In this ion etching -technique, the etch rate of certain materials is drastically reduced. This is realized by the addition of small amounts of a reactive gas in conventional RF sputtering apparatus.

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Preferential Ion Etch Technique with Reactive Sputtering

In this ion etching -technique, the etch rate of certain materials is drastically reduced. This is realized by the addition of small amounts of a reactive gas in conventional RF sputtering apparatus.

It is desirable to have a masking material with an etch rate which is low compared to that of the material to be etched. The etch rate of SiO(2) is drastically changed when a small amount of oxygen or hydrogen is introduced into the sputtering chamber of ion etching apparatus. The ion etch rate of SiO(2) in an argon glow discharge at RF is reduced by a factor of up to 10 when 10% by volume of oxygen is introduced during sputtering.

If SiO(2) is used to mask gold or other materials, the etch rate of which may not be affected by the addition of reactive gases, an improvement of the ratio of relative etch rate results. This improves the ultimate resolution obtainable. This is because masking materials of relatively small thickness can be used in the ion etching process. Thus, it is possible to ion etch very thick gold films with relatively thin SiO(2) masks.

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