Browse Prior Art Database

Use of Gunn Effect Device as Detector of Microwave Radiation

IP.com Disclosure Number: IPCOM000092684D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Braslau, N: AUTHOR

Abstract

This arrangement utilizes the nonlinear current-voltage characteristics of a bulk GaAs specimen at low voltage for detecting high-level microwave signals.

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Use of Gunn Effect Device as Detector of Microwave Radiation

This arrangement utilizes the nonlinear current-voltage characteristics of a bulk GaAs specimen at low voltage for detecting high-level microwave signals.

The detector arrangement includes Gunn-effect device 1 comprising GaAs specimen 3 having quasi-linear contacts 5 and 7. Specimen 3 is preferably large to exhibit a high burnout level. RF generator 9 is connected across specimen 3 along coupling capacitor 11. Device 1 is biased by variable voltage source 13 which is effectively isolated by bypass capacitor 15. Output terminal 1 7 is connected at contact 7 along coupling capacitor 19. A DC voltage is generated across specimen 3 when an RF signal is applied across it. The DC voltage, thus generated, is a linear function of the applied bias current I(b), i.e., V(DC)=pI(b)+
C. The parameters p and C are functions of the RF voltage level, the dimension and resistivity of specimen 3, and the quality of contacts 5 and 7.

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