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Fabricating Tantalum Thin Film Capacitors

IP.com Disclosure Number: IPCOM000092686D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Leonard, RA: AUTHOR [+2]

Abstract

This method facilitates the formation of dielectric Ta(2)O(5) layers. In the fabrication of tantalum thin-film capacitors, it is conventional to deposit a thin Ta film, anodize the film to obtain the desired Ta(2)O(5) thickness, deposit a layer of MnO(2), and then deposit the counter electrode. The anodization step is time consuming and results in the introduction of ion impurities in the Ta(2)O(5) film.

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Fabricating Tantalum Thin Film Capacitors

This method facilitates the formation of dielectric Ta(2)O(5) layers. In the fabrication of tantalum thin-film capacitors, it is conventional to deposit a thin Ta film, anodize the film to obtain the desired Ta(2)O(5) thickness, deposit a layer of MnO(2), and then deposit the counter electrode. The anodization step is time consuming and results in the introduction of ion impurities in the Ta(2)O(5) film.

This method consists of applying alte rnate layers of tantalum and MnO(2), preferably by sputtering, and heating to approximately 400 degrees C, preferably in an oxygen atmosphere. The heating oxidizes the Ta to Ta(2)O(5) and reduces the Mn. The method can be advantageously used to produce stacked thin-film, capacitors. The method can also be used to form other thin-film capacitor materials such as niobium, titanium, tungsten, etc.

This technique eliminates the conventional anodization step and avoids introduction of ion impurities in the dielectric metal oxide layer. Further, the heating step can be accomplished in conjunction with associated process steps requiring heat treatment in the production of integrated circuitry devices.

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