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Thermally Stable Thin Film Capacitor

IP.com Disclosure Number: IPCOM000092687D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Valletta, RM: AUTHOR

Abstract

This capacitor provides a high capacitance per unit area and maintains stability during and after exposure to high-temperature environments. The capacitor has a tantalum electrode, a tantalum oxide dielectric layer, a lithium-doped nickel oxide film overlying the dielectric layer, and an overlying counterelectrode. Multiple units of this composite structure can be built up.

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Thermally Stable Thin Film Capacitor

This capacitor provides a high capacitance per unit area and maintains stability during and after exposure to high-temperature environments. The capacitor has a tantalum electrode, a tantalum oxide dielectric layer, a lithium- doped nickel oxide film overlying the dielectric layer, and an overlying counterelectrode. Multiple units of this composite structure can be built up.

In the fabrication of the capacitor, the tantalum electrode and dielectric layers can be formed in the conventionalmanner. The lithium doped nickel oxide layer is preferably applied by sputtering in an atmosphere of pure oxygen using a cathode formed from a powder composition of Li(x)Ni(1-x)O where x has a value of the order of 0. 02. The counterelectrode, preferably a gold layer, is then applied over the lithium-doped metal oxide layer.

Other materials can be used in place of the lithium-doped nickel oxide, as for example Li(x)Co(1-x)O, Li(x)Mn(1-x)O, solid solutions of these materials, and other conductive nonreactive oxides, sulfides, selenides, etc.

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