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Electropolishing of N Type GE

IP.com Disclosure Number: IPCOM000092710D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gereth, R: AUTHOR [+3]

Abstract

This is an electropolishing technique for N-type Ge. At the present time there is no practical method for successfully electropolishing high-re sistivity, N-type Ge and Si. This is due to the presence of an inversion layer in the surface of the N-type semiconductor which is immersed in an electrolyte. The inversion limits the achievable current density and thus hinders the electropolishing operation. This technique overcome s the difficulty by providing an electrolyte which contains an oxidizing agent. The latter, upon reduction, liberates holes which are injected into the Ge surface. The composition of the electrolyte is 0. 1m K(3)Fe(CN)(6), 0. 1n NaOh, and 1. On NaNO(3). The electrolyte is used with standard electropolishing apparatus.

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Electropolishing of N Type GE

This is an electropolishing technique for N-type Ge. At the present time there is no practical method for successfully electropolishing high-re sistivity, N- type Ge and Si. This is due to the presence of an inversion layer in the surface of the N-type semiconductor which is immersed in an electrolyte. The inversion limits the achievable current density and thus hinders the electropolishing operation. This technique overcome s the difficulty by providing an electrolyte which contains an oxidizing agent. The latter, upon reduction, liberates holes which are injected into the Ge surface. The composition of the electrolyte is 0. 1m K(3)Fe(CN)(6), 0. 1n NaOh, and 1. On NaNO(3). The electrolyte is used with standard electropolishing apparatus.

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