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Removal of Polymerized Photoresists by Atomic and Molecular Hydrogen or Oxygen in a Discharge

IP.com Disclosure Number: IPCOM000092711D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Tsui, RT: AUTHOR [+2]

Abstract

This method is for removing exposed photoresist from the masked surface of a semiconductor. The technique is carried out in conventional RF sputtering apparatus.

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Removal of Polymerized Photoresists by Atomic and Molecular Hydrogen or Oxygen in a Discharge

This method is for removing exposed photoresist from the masked surface of a semiconductor. The technique is carried out in conventional RF sputtering apparatus.

The technique consists of sputtering a masked wafer in an argon atmosphere in the presence of a small amount of hydrogen or oxygen. Atomic hydrogen or oxygen, which is extremely reactive chemically, is created in the discharge. The resist is removed mostly by the chemical reactions of the resist with the hydrogen or oxygen.

The etch rate of most materials is inhibited with the addition of hydrogen or oxygen. Hydrogen or oxygen in the amount of 5 to 15% of the total gas present is utilized to accomplish this photoresist removal technique.

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