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Etching Technique for Use with Positive Photoresist

IP.com Disclosure Number: IPCOM000092727D
Original Publication Date: 1967-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Fink, MS: AUTHOR [+2]

Abstract

Diazo positive photoresists, such as Shipley AZ1340*, swell and buckle in alkaline solutions. This effect results in extensive undercutting and destruction of the desired metal positive mask configuration. The degree of swelling and buckling increases with time. Metal patterns, etched using diazo photoresists in static solutions requiring two minutes or more etch time, are destroyed.

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Etching Technique for Use with Positive Photoresist

Diazo positive photoresists, such as Shipley AZ1340*, swell and buckle in alkaline solutions. This effect results in extensive undercutting and destruction of the desired metal positive mask configuration. The degree of swelling and buckling increases with time. Metal patterns, etched using diazo photoresists in static solutions requiring two minutes or more etch time, are destroyed.

Diazo type photoresists, however, can be used to mask metals in an etching process in which the etching solution is sprayed under substantial force. The method can be used to etch chromium, molybdenum, aluminum and other metals which utilize an alkaline etching solution.

An alkaline potassium ferricyanide K(3)Fe(CN)(6) solution is used to etch a molybdenum metal layer to produce openings in the metal of lines 0.1 mils wide with 0.1 mil spaces between the lines. The process uses the Shipley photoresist. The etch is forcibly sprayed against the umasked molybdenum areas. *Product of Azoplate Corp.

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