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Browse Prior Art Database

Producing a Layer in the Form of a Pattern on the Surface of a Body

IP.com Disclosure Number: IPCOM000092774D
Original Publication Date: 1967-Jan-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Widmer, H: AUTHOR

Abstract

The process is for forming a silicon dioxide pattern on a silicon surface in avoidance of photoresist techniques. Silicon wafer 1 is positioned in a constant-pressure oxygen atmosphere. Wafer 1 is heated to point 3 in oxidation zone 5 of the p(T) diagram of B closely below the oxidation limit represented by straight line 7. Surface regions of wafer 1 not to be oxidized are heated locally, for example, by a focussed electron beam, laser, etc., to point 9 in reduction zone 11 represented by line 13 in the p(T) diagram. Silicon dioxide on the locally heated surface regions is converted to more volatile silicon monoxide which evaporates so as to leave such surface regions exposed.

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Producing a Layer in the Form of a Pattern on the Surface of a Body

The process is for forming a silicon dioxide pattern on a silicon surface in avoidance of photoresist techniques. Silicon wafer 1 is positioned in a constant- pressure oxygen atmosphere. Wafer 1 is heated to point 3 in oxidation zone 5 of the p(T) diagram of B closely below the oxidation limit represented by straight line 7. Surface regions of wafer 1 not to be oxidized are heated locally, for example, by a focussed electron beam, laser, etc., to point 9 in reduction zone 11 represented by line 13 in the p(T) diagram. Silicon dioxide on the locally heated surface regions is converted to more volatile silicon monoxide which evaporates so as to leave such surface regions exposed.

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