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Electroluminescent Controllable by External Radiation

IP.com Disclosure Number: IPCOM000092787D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Crowder, BL: AUTHOR [+2]

Abstract

The device is formed by diffusing Al into an Li-doped substrate of ZnTe at elevated temperatures. This process produce s at the diffused end of the substrate three successive regions of differing resistivities 10, 12, and 14. Region 10 is a P0 region of moderately high resistance when not illuminated and extends about 10 microns into the surface. Region 12 is a compensated region which remains in a state of high resistance even in the presence of light and is about 1 micron in thickness. Region 14 is a P region of low resistance and constitutes the bulk of the device. Metal contacts 16 and 18 are connected to regions 10 and 14, respectively.

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Electroluminescent Controllable by External Radiation

The device is formed by diffusing Al into an Li-doped substrate of ZnTe at elevated temperatures. This process produce s at the diffused end of the substrate three successive regions of differing resistivities 10, 12, and 14. Region 10 is a P0 region of moderately high resistance when not illuminated and extends about 10 microns into the surface. Region 12 is a compensated region which remains in a state of high resistance even in the presence of light and is about 1 micron in thickness. Region 14 is a P region of low resistance and constitutes the bulk of the device. Metal contacts 16 and 18 are connected to regions 10 and 14, respectively.

When operated at 77 degrees K, a bias voltage source 20 biases the device to a point below that at which the luminescence is produced. The device can then be triggered by an electrical pulse applied by a signal source 22 or by applying a pulse of yellow-green light, 0. 55 to 0. 6 microns. Either input has the effect of reducing the resistance in region 10 so that a large fraction of a voltage appears across region 12. The electric field across region 12 is sufficient to sustain avalanching and the impact ionization of minority carriers, i. e., electrons, which are swept into P region 14 where they recombine to produce light emission.

This light emission sustains region 10 in a conducting state after the input electric signal or radiation is terminated. The device can be tu...