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Making EuO Films with Square Hysterisis Loops

IP.com Disclosure Number: IPCOM000092794D
Original Publication Date: 1967-Feb-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Klokholm, E: AUTHOR [+2]

Abstract

A thin film 10 of polycrystalline EuO is established by vacuum deposition on substrate 12. The magnetostriction of film 10 is positive. If the total film 10 stress is tensile, the plane of such film has an easy direction of magnetization with squareness ratio of about one. However, if the total film 10 stress is compressive, the normal to the film plane is an easy direction of magnetization. The hysterisis loop in film 10 has a low squareness ratio M(r)/M(s) or, equivalently, a badly sheared hysterisis loop.

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Making EuO Films with Square Hysterisis Loops

A thin film 10 of polycrystalline EuO is established by vacuum deposition on substrate 12. The magnetostriction of film 10 is positive. If the total film 10 stress is tensile, the plane of such film has an easy direction of magnetization with squareness ratio of about one. However, if the total film 10 stress is compressive, the normal to the film plane is an easy direction of magnetization. The hysterisis loop in film 10 has a low squareness ratio M(r)/M(s) or, equivalently, a badly sheared hysterisis loop.

EuO films with square hysterisis loops are produced by using a substrate with a thermal expansion less than that of the thermal expansion of EuO and by depositing the EuO film at a substrate temperature such that the intrinsic compressive stress is less than 3x 10/9/ dynes/cm/2/.

Drawing B presents a hysterisis loop for EUO film deposited on glass. When EuO films are deposited on Cu or Ag substrates which have thermal expansion coefficients very similar to that of EuO, the squarene ss and remanent magnetization are increased as shown in drawing C.

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