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Fabrication Technique for Bulk Magnetic Film Memory

IP.com Disclosure Number: IPCOM000092901D
Original Publication Date: 1967-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Booth, RR: AUTHOR [+4]

Abstract

This thin-film memory arrangement has a very thin semiperrnanent dielectric adhesive 11 bonding bit plane 13 to word plane 15. These This thin-film memory arrangement has a very thin semipermanent dielectric adhesive 11 bonding bit plane 13 to word plane 15. These planes are sandwiched between ferrite keeper 17 and base 19 having a ground clad copper layer 21 with the nickel-iron thin film 23. Layer 11 is about 0.0005 of an inch in thickness and can be a pressure-sensitive acrylic adhesive electrical wax or similar bonding material. With the semipermanent bond, separation can be made with or without low heat and with a slight pulling force. Thus, replacement or repair can be easily made.

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Fabrication Technique for Bulk Magnetic Film Memory

This thin-film memory arrangement has a very thin semiperrnanent dielectric adhesive 11 bonding bit plane 13 to word plane 15. These This thin-film memory arrangement has a very thin semipermanent dielectric adhesive 11 bonding bit plane 13 to word plane 15. These planes are sandwiched between ferrite keeper 17 and base 19 having a ground clad copper layer 21 with the nickel-iron thin film 23. Layer 11 is about 0.0005 of an inch in thickness and can be a pressure-sensitive acrylic adhesive electrical wax or similar bonding material. With the semipermanent bond, separation can be made with or without low heat and with a slight pulling force.

Thus, replacement or repair can be easily made.

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