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Doping Technique for RF Sputtering

IP.com Disclosure Number: IPCOM000092915D
Original Publication Date: 1967-Mar-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Jones, RE: AUTHOR [+2]

Abstract

Radio frequency RF sputtering is a process that is suitable for depositing any insulator. One limitation to this process is the necessary fabrication of large uniform disks of the material to be sputtered to form the RF electrode. An alternate to the formation of the uniform disk composition of the precise material to be sputtered is to add small quantities of selected material to the deposit as in drawings A and B.

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Doping Technique for RF Sputtering

Radio frequency RF sputtering is a process that is suitable for depositing any insulator. One limitation to this process is the necessary fabrication of large uniform disks of the material to be sputtered to form the RF electrode. An alternate to the formation of the uniform disk composition of the precise material to be sputtered is to add small quantities of selected material to the deposit as in drawings A and B.

In drawing A there is shown the principal RF electrode 1, wafer 2 upon which the insulator is to be sputtered, and thin slab 3 of doping material to be added to the sputtered coating on wafer 2. The material is sputtered from the top edge of slab 3 in the presence of the RF glow discharge and codeposits along with material arriving from electrode 1. It is not necessary to apply any potential to slab 3 although the effect can be enhanced by applying a separate voltage to it. The effect occurs if slab 3 is at the same potential as the wafer 2 to be coated. This procedure is realized with a silicon dioxide RF electrode and slabs of silicon glass, and aluminum.

Drawing B shows another one of the several possible geometries for the technique. Slab 3 is positioned parallel to RF electrode 1 and spaced by a spacer 4 from wafer 2. Essentially similar results are obtained by positioning slab 3 parallel to wafer 2. A more uniform deposit can be obtained using a fine grid or gauge slab over wafer 2. Local codepositions of mater...