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Semiconductor Device Metallurgy of Al Si Films

IP.com Disclosure Number: IPCOM000092954D
Original Publication Date: 1967-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Herdzik, RJ: AUTHOR [+2]

Abstract

The use of sputtered quartz as an encapsulant markedly relaxes any temperature requirement when used with Al-Si films. Flash evaporated Al-Si films react with phosphosilicate and thermal oxides at temperatures and times lower than pure Al films. A glass that fires in the 545 to 550 degrees C range sharply reduces this problem. The problem can be eliminated by the use of sputtered quartz where substrate temperatures are lower, i. e., in the vicinity of 450 degrees C. At 560 degrees C for 20 minutes there is considerable degradation of a phosphosilicate layer whereas at 550 degrees C for 20 minutes there is essentially no degradation.

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Semiconductor Device Metallurgy of Al Si Films

The use of sputtered quartz as an encapsulant markedly relaxes any temperature requirement when used with Al-Si films. Flash evaporated Al-Si films react with phosphosilicate and thermal oxides at temperatures and times lower than pure Al films. A glass that fires in the 545 to 550 degrees C range sharply reduces this problem. The problem can be eliminated by the use of sputtered quartz where substrate temperatures are lower, i. e., in the vicinity of 450 degrees C. At 560 degrees C for 20 minutes there is considerable degradation of a phosphosilicate layer whereas at 550 degrees C for 20 minutes there is essentially no degradation.

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