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Thin Film Capacitors

IP.com Disclosure Number: IPCOM000093003D
Original Publication Date: 1967-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pliskin, WA: AUTHOR [+2]

Abstract

Reliability and thermal stability of thin-film capacitors can be increased by introducing a manganese oxide film between the counter-electrode and the dielectric oxide. It is necessary, however, that the manganese oxide be conductive in order to impart good high-frequency cliaracteristics. The highest oxide of manganese, MnO(2), is the best conductor in thin-film capacitors. It can be formed by reactive sputtering of a manganese cathode in an atmosphere containing oxygen. When this is done, MnO(2) can be obtained at a substrate temperature below 300 degrees C. At temperatures above 300 degrees C, the resistive lower oxides of manganese are formed.

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Thin Film Capacitors

Reliability and thermal stability of thin-film capacitors can be increased by introducing a manganese oxide film between the counter-electrode and the dielectric oxide. It is necessary, however, that the manganese oxide be conductive in order to impart good high-frequency cliaracteristics. The highest oxide of manganese, MnO(2), is the best conductor in thin-film capacitors. It can be formed by reactive sputtering of a manganese cathode in an atmosphere containing oxygen. When this is done, MnO(2) can be obtained at a substrate temperature below 300 degrees C. At temperatures above 300 degrees C, the resistive lower oxides of manganese are formed.

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