Browse Prior Art Database

High Frequency Probe Station

IP.com Disclosure Number: IPCOM000093052D
Original Publication Date: 1967-Apr-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Barnard, JD: AUTHOR [+2]

Abstract

This probe station permits dynamic testing and monitoring of high-speed semiconductor components.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

High Frequency Probe Station

This probe station permits dynamic testing and monitoring of high-speed semiconductor components.

Test signals of one nanosecond rise time can be applied to devices under test and the response signals accurately monitored. Stimulus signal 20 is transmitted through a 50 ohm transmission cable 22 and an attenuator comprising resistors R1 and R2 to a test probe 24. A DC level signal is applied through an LC circuit, switch 26 and co-ax cable 27 to probe 24. The AC stimulus signal, therefore, is superimposed on the DC input level. The LC circuit at the end of cable 27 provides the proper AC termination to signal 20 such that no reflections occur through it without providing a low DC impedance to the DC input such that the DC input appears as though it has a very low source impedance.

When the response of the device under test is desired, switch 26 is operated to connect cable 27 to output cable 30. The attenuator including R1 and R2 decouples signal 20 without reduction of the band pass. Additionally, the AC termination on the DC bias line and the single switch 26 permits complete freedom of application of a DC bias to any test point while maintaining full AC in and out capabilities.

1

Page 2 of 2

2

[This page contains 3 pictures or other non-text objects]