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Evaporant Source

IP.com Disclosure Number: IPCOM000093071D
Original Publication Date: 1967-May-01
Included in the Prior Art Database: 2005-Mar-05
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Howell, JR: AUTHOR [+4]

Abstract

The evaporant source is adapted for use in the application of SiO films by sublimation techniques.

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Evaporant Source

The evaporant source is adapted for use in the application of SiO films by sublimation techniques.

Source 10 has annular cylindrical shield 12 of tantalum with bottom 14 welded to it. Support post 13 is fixed to bottom 14. Annular inner concentric cylinder 16 of expanded tantalum metal is welded to 14 and is a permanent part of the source. Cylinder element 17 is constructed of 120 mesh molybdenum screen which is inserted within 16. Element 17 can be removed and replaced when worn out since it is not welded to the body of source 10. Cover 18 fits snugly over the top of cylinder 16. Cover 19, provided with aperture 21, fits over outer shield 12. The resultant source 10 is mounted within annular quartz shield
20. A RF coil 22 surrounds shield 20.

In operation, SiO or other material to be sublimed is placed within cylinder 16. Covers 18 and 19 are replaced. Shield 12 is heated by induction which, in turn, heats element 17 and the SiO contained in it by radiation. Aperture 21 tends to focus the evaporated SiO emanating from source 10.

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