Browse Prior Art Database

Method of Zone Melting

IP.com Disclosure Number: IPCOM000093182D
Original Publication Date: 1967-Jun-01
Included in the Prior Art Database: 2005-Mar-06
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Gunn, JB: AUTHOR

Abstract

This method of zone refining semiconductive material avoids contamination of the refined material, for example, by a crucible or by exposure to gaseous ambients.

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Method of Zone Melting

This method of zone refining semiconductive material avoids contamination of the refined material, for example, by a crucible or by exposure to gaseous ambients.

High intensity light beam L of a particular wavelength is reflected by conical reflector C and parabolic reflector R so as to be focused at interior region 1 of bar 3 of semiconductive material. This semiconductive material is characterized as being partially transparent and partially absorbent of light of the particular wavelength and, also, as contracting on melting. The optical system provides a higher density of radiant energy at region 1 than at exterior region 5 of bar 3.

Radiant energy absorbed in region 1 is sufficient to cause such region to melt. On the other hand, radiant energy absorbed by region 5 of bar 3 is insufficient to cause such region to melt. Since region 1 contracts when melted, it does not induce destructive stresses in region 5. The radiant energy focus can move along the longitudinal axis of bar 3 as indicated by the arrow. Thus a zone- refining effect is obtained along interior portion 7 of bar 3. Subsequently, region 5 can be removed to allow access to the refined semiconductive material.

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